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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
0.2+/-0.05
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
DESCRIPTION
RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING
6.0+/-0.15
(0.22)
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
FEATURES
High power gain and High Efficiency. Gp>13.2dB 58%min. (175MHz) Gp> 12.4dB 58%min. (527MHz) Gp> 11.5dB 58%Typ. (870MHz) Integrated gate protection diode.
4.9+/-0.15 1.0+/-0.05
1 2
3.5+/-0.05
(0.22) 2.0+/-0.05 (0.25)
3
(0.25)
APPLICATION
For output stage of high power amplifiers in VHF/UHF-band mobile radio sets. The recommended frequency is 135-527MHz.
INDEX MARK (Gate)
0.2+/-0.05
0.9+/-0.1
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value
RoHS COMPLIANT
RD07MUS2B is a RoHS compliant product. RoHS compliance is indicating by the letter "G" after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 Junction to case RATINGS 25 -5/+10 50 0.8* 3 150 -40 to +125 2.5 UNIT V V W W A
C C C/W
Note: Above parameters are guaranteed independently. *: 175MHz spec. is 0.6W
ELECTRICAL CHARACTERISTICS (Tc=25C, UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout1 D1 Pout2 D2 PARAMETER Drain cutoff current Gate cutoff current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=5V, VDS=0V VDS=7.2V, IDS=1mA f=175MHz,VDD=7.2V Pin=0.3W,Idq=250mA f=527MHz ,VDD=7.2V Pin=0.4W,Idq=250mA VDD=9.5V,Po=6.3W(Pin Control) f=175MHz,Idq=250mA,Zg=50 Load VSWR=20:1(All Phase) VDD=9.5V,Po=7W(Pin Control) f=527MHz,Idq=250mA,Zg=50 Load VSWR=20:1(All Phase) MIN 6.3** 58** 7*** 58*** LIMITS TYP MAX. 10 1 1 7.2** 65** 8*** 63*** No destroy UNIT uA uA V W % W % -
VSWRT1 Load VSWR tolerance1
VSWRT2 Load VSWR tolerance2
No destroy
-
Note: Above parameters, ratings, limits and conditions are subject to change. ** At 135-175MHz broad matching *** At 450-527MHz broad matching
RD07MUS2B
MITSUBISHI ELECTRIC 1/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
VGS-IDS CHARACTERISTICS 7 Ta=+25C VDS=10V
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
VDS-IDS CHARACTERISTICS 7 6 5 IDS (A),gm (S) IDS (A) 4 3 2 1 0 0 2 4 VDS (V) 6 8 10 VGS=1.5V 2V 3.5V 3V Ta=+25C 2.5V
6 5 4 3 2 1 0 0
gm IDS
0.5
1
1.5 VGS (V)
2
2.5
3
VDS VS. Ciss CHARACTERISTICS 160 140 120 100 Ciss(pF) 80 60 40 20 0 0 5 10 VDS (V) 15 20 20 0 0 Ta=+25C f=1MHz 120 100 80 Coss(pF) 60 40
VDS VS. Coss CHARACTERISTICS Ta=+25C f=1MHz
5
10 VDS (V)
15
20
VDS VS. Crss CHARACTERISTICS 20 18 16 14 Crss(pF) 12 10 8 6 4 2 0 0 5 10 VDS (V) 15 20 Ta=+25C f=1MHz
RD07MUS2B
MITSUBISHI ELECTRIC 2/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
f-Po CHARACTERISTICS @f=135-175MHz 10 Po 100
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
50 f-Po CHARACTERISTICS @f=135-175MHz 100 Po
Po(dBm) , Gp(dB) , Idd(A)
40
80 Pout(W) , Idd(A)
8
80
30
d(%)
20
Gp
40
4 Idd 2
Ta=+25C Vdd=7.2V Pin=0.3W Idq=250mA
40
10 Idd
20
20
0 0 135 140 145 150 155 160 165 170 175 f (MHz)
0 0 135 140 145 150 155 160 165 170 175 f (MHz)
50
f-Po CHARACTERISTICS @f=450-527MHz Po
100
10
f-Po CHARACTERISTICS @f=450-527MHz Po
100
Po(dBm) , Gp(dB) , Idd(A)
40
80 Pout(W) , Idd(A)
8
80
d(%)
20 Gp 10 Idd
40
4 Idd
Ta=+25C Vdd=7.2V Pin=0.4W Idq=250mA
40
20
2
20
0 0 450 460 470 480 490 500 510 520 530 f (MHz)
0 0 450 460 470 480 490 500 510 520 530 f (MHz)
50
f-Po CHARACTERISTICS @f=763-870MHz Po
100
10
f-Po CHARACTERISTICS @f=763-870MHz Ta=+25C Vdd=7.2V Pin=0.5W Idq=250mA
100
Po(dBm) , Gp(dB) , Idd(A)
40
80 Pout(W) , Idd(A)
8
Po
80
30 Ta=+25C Vdd=7.2V Pin=0.5W Idq=250mA Gp
60 d(%)
6 d 4 Idd
60 d(%)
20
40
40
10 Idd
20
2
20
0 0 760 780 800 820 840 860 880 900 920 940 960 f (MHz)
0 0 760 780 800 820 840 860 880 900 920 940 960 f (MHz)
RD07MUS2B
MITSUBISHI ELECTRIC 3/14
9 Sep 2009
d(%)
30
d
Ta=+25C Vdd=7.2V Pin=0.4W Idq=250mA
60
6
d
60
d(%)
d
Ta=+25C Vdd=7.2V Pin=0.3W Idq=250mA
60
6
d
60
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
10 Pin-Po CHARACTERISTICS @f=175MHz 100 Po
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
50 Pin-Po CHARACTERISTICS @f=175MHz Po Po(dBm) , Gp(dB) , Idd(A) 40 d 80 Pout(W) , Idd(A) 8 d Ta=+25C f=175MHz Vdd=7.2V Idq=250mA Idd 100
80
30
60 d(%)
6
60 d(%) 40 20 0 0.8 100 80 60 40 20 0 0.8 100 80 60 40 20 0 0.8
20 Ta=+25C f=175MHz Vdd=7.2V Idq=250mA 0 5 10 15 20 Pin(dBm)
Gp
40
4
10
20 Idd 0 25 30
2
0
0 0 0.2 0.4 Pin(W) 0.6
50
Pin-Po CHARACTERISTICS @f=527MHz 100 Ta=+25C f=527MHz Vdd=7.2V Idq=250mA Po 80
10
Pin-Po CHARACTERISTICS @f=527MHz Po
Po(dBm) , Gp(dB) , Idd(A)
40
8 Pout(W) , Idd(A)
30
d(%)
20
Gp
40
4 Idd
Ta=+25C f=527MHz Vdd=7.2V Idq=250mA
10 Idd 0 0 5 10 15 20 Pin(dBm) 25 30
20
2
0
0 0.0 0.2 0.4 Pin(W) 0.6
50
Pin-Po CHARACTERISTICS @f=870MHz Ta=+25C f=870MHz Vdd=7.2V Idq=250mA
100
10
Pin-Po CHARACTERISTICS @f=870MHz
Po(dBm) , Gp(dB) , Idd(A)
40
Po
80 Pout(W) , Idd(A)
8
Po
30 20 Gp 10 Idd 0 0 5 10 15 20 Pin(dBm) 25 30
60 d(%)
6 d 4 Idd Ta=+25C f=870MHz Vdd=7.2V Idq=250mA
40
20
2
0
0 0.0 0.2 0.4 Pin(W) 0.6
RD07MUS2B
MITSUBISHI ELECTRIC 4/14
9 Sep 2009
d(%)
d(%)
d
60
6
d
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
10 Vgg-Po CHARACTERISTICS @f=175MHz Ta=+25C f=175MHz Pin=0.3W Icq=250mA Zg=ZI=50 ohm 5
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
25 Vdd-Po CHARACTERISTICS @f=175MHz Ta=+25C f=175MHz Pin=0.3W Icq=250mA Zg=ZI=50 ohm 5
20
4
8
Po
4
15 Po(W)
Idd(A)
10 Idd
2
Po(W)
4 Idd
2
5
1
2
1
0 3 4 5 6 7 Vdd(V) 8 9 10
0
0 0 0.4 0.8 1.2 Vgg(V) 1.6 2
0
25
Vdd-Po CHARACTERISTICS @f=527MHz Ta=+25C f=527MHz Pin=0.4W Idq=250mA Zg=ZI=50 ohm Po
5
10
Vgg-Po CHARACTERISTICS @f=527MHz Ta=+25C f=527MHz Pin=0.4W Icq=250mA Zg=ZI=50 ohm
5
20
4
8
Po
4
Po(W)
Idd(A)
15
3
6 Po(W)
3 Idd(A)
10 Idd 5
2
4 Idd 2
2
1
1
0 3 4 5 6 7 Vdd(V) 8 9 10
0
0 0 0.4 0.8 1.2 Vgg(V) 1.6 2
0
25
Vdd-Po CHARACTERISTICS @f=870MHz Ta=+25C f=870MHz Pin=0.5W Icq=250mA Zg=ZI=50 ohm
5
20
4
Po(W)
10
Idd
2
5
Po
1
0 3 4 5 6 7 Vdd(V) 8 9 10
0
RD07MUS2B
Idd(A)
15
3
MITSUBISHI ELECTRIC 5/14
9 Sep 2009
Idd(A)
Po
3
6
3
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
Vdd C2 21mmW 22uF,50V
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TEST CIRCUIT(f=135-175MHz)
Vgg
C1 W 21mm (f=135-175MHz) RD07MUS2B 9.5mm 7.5mm 1mm 100pF 56pF 43pF 2.2 Ohm 22pF 22pF 100pF 3mm L1 L3
3.5mm 1.5mm RF-in
L5
5.5mm 3mm
4.7K Ohm L4 4.5mm 5mm
L2 3mm 3.5mm 7.5mm 2.5mm
100pF RF-out 4.5mm
20pF
Note:Board material- Glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm W:Line width=1.0mm
L1,L2 : 31.0nH, Enameled wire 6Turns,D:0.23mm,1.66mmO.D L3,L5 : 6.6nH, Enameled wire 2Turns,D:0.23mm,1.66mmO.D L4 : 10.8nH, Enameled wire 4Turns,D:0.43mm,1.66mmO.D C1,C2 : 1000pF,0.022uF in parallel
TEST CIRCUIT(f=450-527MHz)
Vdd Vgg C2 21mm W W 21mm (f=450-527MHz) RD07MUS2B 1mm 1mm 3mm 100pF 12pF 8pF 8pF 12pF 54pF 24pF 24pF 9pF 8pF 4.5mm 6mm 2.5mm 0.5mm 7.5mm 5.5mm L1 L2 100pF RF-out 22uF,50V
C1
4.7K Ohm 4mm RF-in 10mm 4mm 5mm 5.5mm
Note:Board material- Glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm W:Line width=1.0mm
L1 : 34.5nH, Enameled wire 5Turns,D:0.43mm,2.46mmO.D L2 : 6.6nH, Enameled wire 2Turns,D:0.23mm,1.60mmO.D C1,C2 : 1000pF,0.022uF in parallel
RD07MUS2B
MITSUBISHI ELECTRIC 6/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
Vdd
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TEST CIRCUIT(f=763-870MHz)
Vgg C1 21mm W W 21mm (f=763-870MHz) RD07MUS2B 1mm 1.5mm 0.5mm 150pF 1pF 6pF 12pF 10pF 8pF 6pF 1pF 1mm 12mm 1mm 1mm 16.5mm 10pF 8pF L1 150pF RF-out C2 22uF,50V
4.7K Ohm 19mm RF-in 9mm 2.5mm
Note:Board material- Glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm W:Line width=1.0mm
L1 : 37.8nH, Enameled wire 7Turns,D:0.23mm,1.6mmO.D C1,C2 : 1000pF,100pF in parallel
RD07MUS2B
MITSUBISHI ELECTRIC 7/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
Input / Output Impedance VS. Frequency Characteristics
f Zout* (MHz) (ohm) 135 3.50-j5.54 155 2.57-j2.57 175 2.06+j0.62 Zo=10ohm
Zout* ( f=135, 155, 175MHz)
Zout*: Complex conjugate of output impedance
Zin* ( f=135, 155, 175MHz)
Zo=10ohm
f Zin* (MHz) (ohm) 135 5.58+j2.43 155 5.25+j5.60 175 5.01+j8.65
Zin*: Complex conjugate of input impedance
RD07MUS2B
MITSUBISHI ELECTRIC 8/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
Input / Output Impedance VS. Frequency Characteristics
Zout* ( f=450, 490, 520, 527MHz)
Zo=10ohm
f (MHz) 450 490 520 527
Zout* (ohm) 2.80+j1.07 2.25+j0.75 1.51+j1.04 1.36+j1.20
Zout*: Complex conjugate of output impedance
Zin* ( f=450, 490, 520, 527MHz)
Zo=10ohm
f (MHz) 450 490 520 527
Zin* (ohm) 2.62+j2.02 2.90+j3.07 3.29+j3.70 3.40+j3.81
Zin*: Complex conjugate of input impedance
RD07MUS2B
MITSUBISHI ELECTRIC 9/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
In put / Output Impedance VS. Frequency Characteristics
Zout* ( f=763, 806, 817, 870MHz)
Zo=10ohm
f (MHz) 763 806 817 870
Zout* (ohm) 2.01+j0.43 2.16+j0.80 2.17+j0.85 2.17+j1.07
Zout*: Complex conjugate of output impedance
f (MHz) 763 806 817 870
Zin* (ohm) 1.72-j1.54 1.55-j0.50 1.46-j0.23 1.28+j0.95
Zo=10ohm
Zin* ( f=763, 806, 817, 870MHz)
Zin*: Complex conjugate of input impedance
RD07MUS2B
MITSUBISHI ELECTRIC 10/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
S12 (mag) 0.016 0.016 0.015 0.015 0.014 0.013 0.013 0.011 0.010 0.009 0.008 0.008 0.008 0.008 0.007 0.006 0.005 0.005 0.004 0.004 0.004 0.004 0.003 0.003 0.003 0.002 0.002 0.002 0.002 (ang) -9.1 -14.2 -15.2 -18.8 -23.8 -27.4 -32.8 -36.7 -39.7 -41.9 -44.9 -45.1 -44.2 -46.4 -46.4 -48.0 -46.0 -45.9 -44.9 -42.0 -45.4 -43.6 -41.8 -39.4 -33.7 -26.6 -17.3 -7.4 8.9 (mag) 0.745 0.759 0.763 0.773 0.781 0.806 0.825 0.843 0.859 0.874 0.888 0.893 0.894 0.896 0.909 0.915 0.921 0.928 0.931 0.931 0.931 0.933 0.934 0.935 0.941 0.943 0.943 0.949 0.949 S22 (ang) -168.8 -169.5 -170.0 -170.7 -170.6 -171.0 -171.7 -172.4 -173.2 -173.9 -174.5 -174.8 -174.9 -175.4 -176.0 -176.5 -177.4 -177.8 -178.0 -178.3 -178.3 -178.6 -178.8 -178.9 -179.2 -179.5 179.9 179.7 179.6
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
RD07MUS2B S-PARAMETER DATA (@Vdd=7.2V, Id=250mA)
Freq. [MHz] 100 135 150 175 200 250 300 350 400 450 500 520 527 550 600 650 700 750 763 800 806 817 850 870 900 950 1000 1050 1100 S11 (mag) 0.850 0.857 0.858 0.863 0.871 0.881 0.889 0.903 0.910 0.918 0.927 0.928 0.929 0.931 0.934 0.940 0.943 0.946 0.948 0.950 0.951 0.950 0.950 0.955 0.952 0.956 0.957 0.960 0.961 (ang) -170.8 -173.2 -173.7 -174.6 -175.4 -176.8 -178.1 -179.0 -180.0 178.8 177.7 177.2 177.2 176.7 175.6 174.4 173.5 172.6 172.3 171.5 171.7 171.3 170.8 170.6 170.0 169.2 168.4 167.7 167.1 S21 (mag) (ang) 10.060 79.2 7.300 73.1 6.509 70.7 5.435 66.9 4.687 63.5 3.556 56.7 2.791 51.2 2.261 45.7 1.861 40.9 1.559 36.7 1.320 33.0 1.236 31.5 1.212 31.2 1.130 29.5 0.974 26.5 0.848 23.4 0.745 20.9 0.660 18.6 0.638 18.0 0.587 16.5 0.578 16.3 0.563 15.8 0.522 14.5 0.502 13.8 0.471 12.9 0.427 11.1 0.387 9.7 0.353 8.1 0.323 6.9
RD07MUS2B
MITSUBISHI ELECTRIC 11/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
S12 S22 (ang) -9.3 -13.3 -17.3 -20.0 -23.1 -28.7 -32.8 -36.0 -40.7 -42.4 -45.0 -45.4 -44.5 -45.1 -47.2 -47.4 -46.7 -44.2 -44.2 -43.7 -42.8 -42.3 -40.8 -37.7 -32.1 -25.2 -18.0 -6.7 6.9 (mag) 0.782 0.793 0.797 0.806 0.812 0.831 0.849 0.863 0.877 0.890 0.902 0.904 0.907 0.909 0.918 0.925 0.931 0.935 0.939 0.938 0.938 0.940 0.941 0.940 0.946 0.949 0.949 0.955 0.954 (ang) -171.0 -171.6 -172.0 -172.5 -172.7 -173.0 -173.6 -174.3 -175.0 -175.5 -176.2 -176.3 -176.4 -176.9 -177.4 -178.0 -178.6 -179.0 -179.1 -179.3 -179.5 -179.6 -179.8 -180.0 179.8 179.5 179.0 178.8 178.7 (mag) 0.016 0.016 0.016 0.015 0.015 0.014 0.013 0.012 0.010 0.009 0.008 0.008 0.008 0.008 0.007 0.006 0.005 0.005 0.005 0.004 0.004 0.004 0.003 0.003 0.003 0.003 0.002 0.002 0.002
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
RD07MUS2B S-PARAMETER DATA (@Vdd=3.6V, Id=250mA)
Freq. [MHz] 100 135 150 175 200 250 300 350 400 450 500 520 527 550 600 650 700 750 763 800 806 817 850 870 900 950 1000 1050 1100 S11 (mag) 0.850 0.855 0.856 0.862 0.869 0.881 0.887 0.901 0.909 0.917 0.927 0.929 0.926 0.929 0.933 0.937 0.944 0.945 0.947 0.949 0.949 0.951 0.949 0.953 0.952 0.957 0.959 0.960 0.960 (ang) -172.3 -174.2 -174.7 -175.3 -176.2 -177.4 -178.5 -179.5 179.6 178.6 177.5 177.0 176.9 176.4 175.3 174.2 173.4 172.5 172.2 171.6 171.5 171.4 170.8 170.5 169.9 169.2 168.2 167.7 167.0 (mag) 8.581 6.239 5.564 4.661 4.030 3.057 2.400 1.945 1.606 1.345 1.139 1.068 1.048 0.975 0.841 0.732 0.644 0.571 0.552 0.508 0.502 0.488 0.454 0.436 0.408 0.370 0.335 0.306 0.280 S21 (ang) 78.7 73.0 70.6 66.8 63.5 56.8 51.3 46.0 41.2 37.2 33.2 31.9 31.6 29.9 26.9 23.8 21.4 19.2 18.4 17.0 16.8 16.2 15.0 14.3 13.3 11.8 10.3 8.6 7.4
RD07MUS2B
MITSUBISHI ELECTRIC 12/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
Precautions for the use of MITSUBISHI silicon RF power amplifier devices
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3.RA series and RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4.In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under extreme conditions. 6.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of operating into a severe high load VSWR approaching an open or short, an over load condition could occur. is risk for burn out of the transistors and burning of other parts including the substrate in the module. 7.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level also. 8.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 9.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it's original form. 10.For additional "Safety first" in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 11. Please refer to the additional precautions in the formal specification sheet. In the worst case there
warning !
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD07MUS2B
MITSUBISHI ELECTRIC 13/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
Keep safety first in your circuit designs !
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
- These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. - Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. - All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com). - When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. - Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. - If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. - Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein.
RD07MUS2B
MITSUBISHI ELECTRIC 14/14
9 Sep 2009

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